Low Temperature bonding Technology for Electronic Packaging

Low temperature bonding technology for 3D integration

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.03.038 ⇑ Corresponding author. E-mail address: [email protected] (K.-N. C 3D integration provides a promising solution to achieve system level integration with high function density, small form factor, enhanced transmission speed and low power consumption. Stacked bonding is the key technology to enable the comm...

Modern Electronic Packaging Technology

A view of modern electronic packaging technology is presented along with its applications at APL. Although not always distinct, electronic packaging may be separated into three levels: component, board, and system. The manufacturing technologies and designs may vary at each level, but they all must provide electrical interconnection, thermal management, and mechanical and environmental protecti...

Low-Temperature Wafer Bonding for MEMS Hermetic Packaging Using Sub-micron Au Particles

The study of wafer level hermetic bonding using sub-micron gold particles with the mean diameter of 0.3_m was conducted at bonding temperature of 150 – 300 °C with varying bonding pressure in the range of 50 – 100 MPa. 4.5 mm-square, 10 μm – 100 μm-wide seal line patterns of sub-micron Au particles were formed on Si or glass wafers by means of wafer level processing using photolithography and s...

MCM: The High-Performance Electronic Packaging Technology

Low temperature zero-level packaging of MEMS

Zero-level packaging technology ensures dicing and handling compatibility of the MEMS device along with low cost by encapsulating the MEMS components using wafer level processing. It is also essential for providing the MEMS with a controlled ambient in a cost-effective way. In order to be compatible with a broad range of MEMS processes, IMEC developed sealing methods with a low temperature budg...